Questions in semiconductor

Select	Question
	In forward bias, the width of potential barrier in a P-N junction diode
	The cause of the potential barrier in a P-N diode is
	In a PN-junction diode not connected to any circuit
	Which of the following statements is not true
	The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junctions are
	In P-N junction, avalanche current flows in circuit when biasing is
	The depletion layer in the P-N junction region is caused by
	Which one is reverse-biased
	In a P-N junction diode if P region is heavily doped than n region then the depletion layer is
	Which one is in forward bias