semiconductor

Related Questions

• The electron mobility in N-type germanium is $3900 cm^2/v-s$ and its conductivity is $6.24 mho/cm$, then impurity concentration will be if the effect of cotters is negligible

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• The reason of current flow in P-N junction in forward bias is

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• The current through an ideal PN-junction shown in the following circuit diagram will be

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• In a semiconductor, the concentration of electrons is $8\times {{10}^{14}}/c{{m}^{3}}$and that of the holes is $5\times {{10}^{12}}c{{m}^{3}}.$ The semiconductor is

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