Questions in semiconductor

Select	Question
	The reason of current flow in P-N junction in forward bias is
	The resistance of a reverse biased P-N junction diode is about
	Consider the following statements A and B and identify the correct choice of the given answersA: The width of the depletion layer in a P-N junction diode increases in forwards biasB: In an intrinsic semiconductor the fermi energy level is exactly in the middle of the forbidden gap
	In comparison to a half wave rectifier, the full wave rectifier gives lower
	Avalanche breakdown is due to
	Which is reverse biased diode
	Zener breakdown in a semi-conductor diode occurs when
	When forward bias is applied to a P-N junction, then what happens to the potential barrier ${{V}_{B}}$, and the width of charge depleted region $x$
	The potential barrier, in the depletion layer, is due to
	In the given figure, which of the diodes are forward biased ?