Questions in semiconductor

Select	Question
	$GaAs$ is
	If ${{n}_{e}}$ and ${{n}_{h}}$ are the number of electrons and holes in a semiconductor heavily doped with phosphorus, then
	An N-type and P-type silicon can be obtained by doping pure silicon with
	N-type semiconductors will be obtained, when germanium is doped with
	The state of the energy gained by valance electrons when the temperature is raised or when electric field is applied is called as
	To obtain electrons as majority charge carriers in a semiconductor, the impurity mixed is
	For germanium crystal, the forbidden energy gap in joules is
	A pure semiconductor behaves slightly as a conductor at
	Which is the correct relation for forbidden energy gap in conductor, semi conductor and insulator
	The band gap in Germanium and silicon in $eV$ respectively is